Thin Film PV Technologies CIGS PV Technology Week 5.3 Arno Smets
CIGS NiA1 MgF 2 TCO (ZnO:Al) TCO (intrinsic ZnO) CdS (n-type) CuInSe 2 (p-type) Mo Glass
CIGS IV- semiconductors: III- V semiconductors: II- VI semiconductors Rn Xe Kr Ar Ne He At I Br Cl F Po Te Se S O Bi Sb As P N Pb Sn Ge Si C Tl In Ga Al B Hg Cd Zn Au Ag Cu VlllA VllA VlA VA lva lllva llb lb 2 10 18 36 34 86 9 17 35 53 85 8 16 34 52 84 7 15 33 51 83 6 14 32 50 82 5 13 31 49 81 30 48 80 29 47 97 4.003 20.183 39.948 83.80 131 30 (222) 35.453 79.909 126 904 (210) 18.998 32.064 78.96 127 60 (210) 15.999 30.974 74.922 121.75 208.980 14.007 28.086 72.59 118 69 207.19 12.011 26.982 69.72 204.37 10.811 65.37 112.40 200.59 63.54 107.870 196.967 114 82
CIGS IV- semiconductors: III- V semiconductors: II- VI semiconductors VlllA lllva 5 B 10.811 6 lva C 12.011 7 VA N 14.007 8 VlA O 15.999 9 VllA F 18.998 2 10 He 4.003 Ne 20.183 CuInSe 2 E gap = 1.0 ev 29 lb Cu 63.54 30 llb Zn 65.37 13 31 Al 26.982 Ga 69.72 14 32 Si 28.086 Ge 72.59 15 33 P 30.974 As 74.922 16 34 S 32.064 Se 78.96 17 35 Cl 35.453 Br 79.909 18 36 Ar 39.948 Kr 83.80 47 97 Ag 107.870 Au 196.967 48 80 Cd 112.40 Hg 200.59 49 81 In 114 82 Tl 204.37 50 82 Sn 118 69 Pb 207.19 51 83 Sb 121.75 Bi 208.980 52 84 Te 127 60 Po (210) 53 85 I 126 904 At (210) 34 86 Xe 131 30 Rn (222)
CIGS IV- semiconductors: III- V semiconductors: II- VI semiconductors VlllA lllva 5 B 10.811 6 lva C 12.011 7 VA N 14.007 8 VlA O 15.999 9 VllA F 18.998 2 10 He 4.003 Ne 20.183 CuInSe 2 E gap = 1.0 ev CuInS 2 E gap = 1.5 ev 29 lb Cu 63.54 30 llb Zn 65.37 13 31 Al 26.982 Ga 69.72 14 32 Si 28.086 Ge 72.59 15 33 P 30.974 As 74.922 16 34 S 32.064 Se 78.96 17 35 Cl 35.453 Br 79.909 18 36 Ar 39.948 Kr 83.80 47 97 Ag 107.870 Au 196.967 48 80 Cd 112.40 Hg 200.59 49 81 In 114 82 Tl 204.37 50 82 Sn 118 69 Pb 207.19 51 83 Sb 121.75 Bi 208.980 52 84 Te 127 60 Po (210) 53 85 I 126 904 At (210) 34 86 Xe 131 30 Rn (222)
CIGS IV- semiconductors: III- V semiconductors: II- VI semiconductors VlllA 29 lb Cu 63.54 30 llb Zn 65.37 lllva 5 13 31 B 10.811 Al 26.982 Ga 69.72 6 lva 14 32 C 12.011 Si 28.086 Ge 72.59 7 15 33 VA N 14.007 P 30.974 As 74.922 8 VlA 16 34 O 15.999 S 32.064 Se 78.96 9 VllA 17 35 F 18.998 Cl 35.453 Br 79.909 2 10 18 36 He 4.003 Ne 20.183 Ar 39.948 Kr 83.80 CuInSe 2 E gap = 1.0 ev CuInS 2 E gap = 1.5 ev CuGaSe 2 E gap = 1.7 ev 47 97 Ag 107.870 Au 196.967 48 80 Cd 112.40 Hg 200.59 49 81 In 114 82 Tl 204.37 50 82 Sn 118 69 Pb 207.19 51 83 Sb 121.75 Bi 208.980 52 84 Te 127 60 Po (210) 53 85 I 126 904 At (210) 34 86 Xe 131 30 Rn (222)
CIGS Chen and Gong, PRB 75, 205209 (2007)
CIGS CIS: CuInSe 2 E gap = 1.0 ev Chen and Gong, PRB 75, 205209 (2007)
CIGS CIS: CuInSe 2 E gap = 1.0 ev CuIn x Ga 1- x Se 2 E gap = 1.5 ev Chen and Gong, PRB 75, 205209 (2007)
CIGS CIS: CuInSe 2 E gap = 1.0 ev CuIn x Ga 1- x Se 2 E gap = 1.5 ev x=0 CuGaSe 2 E gap = 1.7 ev Chen and Gong, PRB 75, 205209 (2007)
CIGS CIS: CuInSe 2 E gap = 1.0 ev CuIn x Ga 1- x Se 2 E gap = 1.5 ev x=0 CuGaSe 2 E gap = 1.7 ev x=1 CuInSe 2 E gap = 1.0 ev Chen and Gong, PRB 75, 205209 (2007)
CIGS P- type Cu deficiencies Chen and Gong, PRB 75, 205209 (2007)
CIGS solar cell Glass
CIGS solar cell Mo Glass
CIGS solar cell P- type CIGS Mo Glass
CIGS solar cell CdS Buffer P- type CIGS Mo Glass
CIGS solar cell i- ZnO CdS Buffer P- type CIGS Mo Glass
CIGS solar cell Al- ZnO i- ZnO CdS Buffer P- type CIGS Mo Glass
CI(G)S solar cell band diagram n-zno ZnO i-zno CdS 2.5 ev CIGS E F 1.1 ev E c E v 3.3 ev
CIGS solar cell n- type CIGS Cu(InGa) 3 Se 5 Al- ZnO i- ZnO CdS Buffer P- type CIGS Mo Glass
Role Sodium in CIGS solar cells Al- ZnO i- ZnO CdS Buffer P- type CIGS Mo Glass
SpuCering deposidon Co- evaporadon material vapour target material substrate electron beam to vacuum pump
Processing CIGS solar cells 1 Mo Cu,Ga,In,Se CdS ZnO
Processing CIGS solar cells 1 Mo Cu,Ga,In,Se CdS ZnO 2
Processing CIGS solar cells 1 Mo Cu,Ga,In,Se CdS ZnO 2 3
Labscale CIGS solar cells Glass NREL: Eff = 19.9 % Voc ~ 700 mv J sc ~ 35-36 macm - 2 FF = 81 %
Labscale CIGS solar cells Glass NREL: Eff = 19.9 % Voc ~ 700 mv J sc ~ 35-36 macm - 2 FF = 81 % Flexible SFL- MS: Eff: 20.4 %
Mo back contact glass substrate
Mo back contact glass substrate CdS buffer layer CI(G)S absorber Mo back contact glass substrate
Mo back contact glass substrate CdS buffer layer CI(G)S absorber Mo back contact glass substrate i-zno/n-zno:al window CdS buffer layer CI(G)S absorber Mo back contact glass substrate
Module Efficiency aperture area
Module Efficiency aperture area total module area
10 9 Abundance, atoms of element per 10 6 atoms of Si 10 6 10 3 1 10-3 H Li C B Bc O Si Ai Na F N Rock-forming elements Mg K P S Cl Ca Fe Ti Mn Cu Zn Rb V Cr Ga Sc Co Ni As Y Ge Br 10 20 30 40 50 6 0 Se Sr Zr Nb Mo Ag Ru Cd Rh In Pd Te Ba Cs Sb Il I Rare earth elements Co Nd Gd La Sm Pr Eu Tb Ho Im Rarest metals I Dy Er Hi Yb Ia W Re Os Ir Hg Ti Pt Pb Au Bi Th U 70 80 90
CZTS (CuZnSnS) IV- semiconductors: III- V semiconductors: II- VI semiconductors Rn Xe Kr Ar Ne He At I Br Cl F Po Te Se S O Bi Sb As P N Pb Sn Ge Si C Tl In Ga Al B Hg Cd Zn Au Ag Cu VlllA VllA VlA VA lva lllva llb lb 2 10 18 36 34 86 9 17 35 53 85 8 16 34 52 84 7 15 33 51 83 6 14 32 50 82 5 13 31 49 81 30 48 80 29 47 97 4.003 20.183 39.948 83.80 131 30 (222) 35.453 79.909 126 904 (210) 18.998 32.064 78.96 127 60 (210) 15.999 30.974 74.922 121.75 208.980 14.007 28.086 72.59 118 69 207.19 12.011 26.982 69.72 204.37 10.811 65.37 112.40 200.59 63.54 107.870 196.967 114 82 CuZnSnS