appreciable (0.15 nm) are also nearly reached at intermediate voltages (0.17 nm at 300 or 400 kv) due to

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appreciable investigation Microsc. Microanal. Microstruct. 4 (1993) APRIUJUNE 1993, PAGE 111 111 Classification Physics Abstracts 61.16D 61.16F 07.80 In situ experiments in the new transmission electron microscopes J. Pelissier and P. Debrenne CEACEREM, Centre d Etudes Nucléaires de Grenoble, BP 85X, 38041 Grenoble Cedex, France (Received January 18, 1993 ; accepted Febmary 26,1993) Résumé. 2014 La sensibilisation des constructeurs de microscopes électroniques à transmission aux performances de très haute résolution les conduit à concevoir des espaces objet difficilement compatibles avec la possibilité de recevoir des porteobjets instrumentés plus ou moins complexes. Cela implique quelques adaptations particulières à mettre en oeuvre en concertation avec le constructeur. Nous présentons les concepts de développement de l expérimentation in situ applicables aux microscopes à transmission modernes de tension moyenne. Les difficultés et les écueils à éviter sont illustrés de traction chauffant au moyen d un exemple de réalisation complexe de porteobjet: "un porteobjet à double inclinaison". Nous comparons les possibilités offertes par les constructeurs JEOL et HITA CHI pour cet exemple de réalisation. 2014 Abstract. sensibilization of microscope builders to the interest of very high resolution lead them to design transmission electron microscopes with specific specimen chambers, which do not fit complex specimen holders as usually used for in situ experiments. y need therefore some particular adaptations to set up in concertation with manufacturers. We present here some concepts of development of in situ experimentation adaptable to modern transmission electron microscope operating at intermediate voltage (200400 kv). difficulties and dangers to be avoided are illustrated on an example of design of a complex specimen holder: "a sideentry stage with straining, heating and doubletilt facilities". We compare the possibilities offered by two manufacturers, HITACHI and JEOL, for this particular realization. 1. Introduction. Microscope manufacturers and research laboratories have shown during many years of evolution of the technique that High Voltage Electron Microscopy yields significant improvements in the three following points: increase of resolution of specific electron matter interactions due to the high energy of electrons in situ experiments on thicker specimens due both to a higher penetration of electrons and to the available volume in the specimen chamber. Concerning the increase in resolution, the best lattice resolution limits reached by HVEM (0.15 nm) are also nearly reached at intermediate voltages (0.17 nm at 300 or 400 kv) due to the improvements of electron optics. Experiments on electronmatter interactions are specific Article available at http://mmm.edpsciences.org or http://dx.doi.org/10.1051/mmm:01993004023011100

112 of basic research, whereas in situ experiments are more dedicated to applied research on industrial materials, in particular in metallurgy. Except some particular cases, as for instance studies of mechanical properties under electron irradiation of materials for nuclear industry, where high voltages are compulsory, in situ experiments can be performed on more conventional microscopes. 2. Choice criteria of the microscope. thickness of foils for in situ experiments must be large enough to make the experiment representative of the bulk material (surface effects, characteristic size of observed features,...). It is then necessary to increase electron penetration by the means of a high acceleration voltage, while keeping radiation damage whithin reasonable limits. Penetration significantly increases between 0 and 400 kv, but the increase rate slows down at higher voltages, and most common metals have a threshold for radiation damage between 300 and 500 kev This voltage range is then the best compromise. In situ experiments often need complex specimen holders, which are most conveniently designed in a "side entry" version. pole piece gap of the objective lens has to be large enough to allow confortable translation and tilting facilities. n resolution depends both on the electron wavelength and on the pole piece gap through the spherical aberration coefficient. 300 and 400 kv microscopes seem to give the best compromise between penetration, radiation damage and resolution. However, in this range of accelerating voltage, manufacturers propose microscopes with very small specimen chambers, which do not allow the introduction of complicated stages. A combined design of these stages and of the specimen chambers is then necessary. 3. Difficulties in the design of complicated spécimen holders. We shall discuss here the difficulties encountered in the design of a sideentry stage with straining, heating and doubletilting facilities on a concrete example. principle is shown in figure 1. load (up to 1500 g) is applied to the sample through a tungsten wire (diameter 0.15 mm) which allows double tilting (ai ±40 ; = a2 ±8 ). maximum temperature in operation is 1100 K. = An electronic regulation ensures a constant load during changes of temperature and tilt (02). Figure 2 shows part of a tensileheating stage we have designed and which is adaptable to JEOL 200 CX and 2000 FX microscopes. 3.1 SIZE LIMITATION OF THE HOLDER DUE TO THE GONIOMETER. various controls necessary to operate the holder must travel through the goniometer, inside the cylindrical part of the stage. Two examples are shown in figure 3. diameters of the cylindrical part of the stage given by the manufacturers are:

Schematic 113 Fig. 1. diagram of a side entry stage with straining, heating and double tilting facilities. 3.2 LIMITATIONS DUE TO THE GAP OF THE OBJECTIVE POLE PIECE. gap of the objective pole pieces is usually about 4 to 6 mm. dimensions of the part of a complex stage located inside the pole pieces can be 5 x 9 x 25 mm. It is then necessary to design pole pieces whose characteristics are given in figure 4. 3.3 OBJECTIVE APERTURE POSITION AND ANTICONTAMINATION DEVICE. increase of the gap and the size of the specimen holder lead to a modification of the position z of the objective aperture and of the shape of the anticontamination device. 3.4 VACUUM GATE POSITION INSIDE THE GONIOMETER. new standard stages are very short: the distance between the axis of the sample and the tip of the specimen holder is about 8 mm. During the introduction of the stage into the microscope, this tip comes very close to the vacuum gate of the goniometer. length of in situ holders might be larger, and in this case

Detail 114 Fig. 2. of the stage shown in figure 1: note the homogeneity of temperature of the specimen at the center of the microfurnace. Fig. 3. diameter of the cylindrical part of the stage must be large enough to reach the specimen region (see text). to allow different controls

Designs 115 Fig. 4. of the objective pole pieces. the cyclindrical part of the stage should be fitted with a device allowing the holder to stand back during primary pumping and then to be moved forward to the right position, with the sample on the beam axis. This device shown in figure 5 has been designed for the goniometers of the JEOL 2010 and 3010 microscopes and can be adapted to the HITACHI 9000 NAR. 3.5 X TRANSLATION OF THE SPECIMEN HOLDER In the new JEOL microscopes, this control is comprised in the goniometer itself (Fig. 6), instead of being operated through a rod pushing the holder tip. This new technology suppresses thermal losses at the contact point between the rod and the holder tip. This is quite important for low temperature stages. 4. Conclusion. It is difficult for microscope manufacturers to commercialize a complete set of stages ranging

Special New 116 Fig. 5. device for the introduction of a long specimen holder into 2010 and 3010 JEOL microscopes. a) special position for primary pumping inside the goniometer. b) normal position inside the microscope column. Fig. 6. goniometer for 2010 and 3010 JEOL microscopes (from JEOL documents).

from the simplest to the most complex ones. goal of the present paper is not to discuss the advantages and drawbacks of HITACHI and JEOL microscopes. two series of machines has considerable advantages and each of the corresponding manufacturers is prepared to design the compulsory modifications and adjustments discussed above. We tried to show that, though modern transmission microscopes are optimized for analysis and high resolution imaging, the design by research laboratories of specific and complex stages for in situ experimentation is possible. 117