PV wafer production Ideas for Low-cost-manufacturing for MONO, MULTI and MONO-Like PV-SOLAR-WAFER

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1 PV wafer production Ideas for Low-cost-manufacturing for MONO, MULTI and MONO-Like PV-SOLAR-WAFER Roadmap for big Wafer cost reduction MONO 60 to 30 cts. POLY 49 to 13 cts. Invention of Diamond-Wire by 1972 Dr. G. Könnemann Co-invention of Slurry Wafer Saw 1979 with Charles Hauser (later HCT-Applied Materials)

2 First SLURRY wafer saws built for MB First DSS furnace for POLY Silicon built by by Logomatic, where Charles Hauser Crystal-Systems USA (Boston MIT lectures) was employed First SLURRY wafer saws built DSS furnace technology sales by Logomatic for from Crystal Systems Charles Hausers new company HCT to Mr. Gupta (later GTAT) for $ First MULTI-Wire saw with Dia-Wire for MONO PV-wafer cutting made by Logomatic Discovery that POLY/PV-wafer sawn with Dia-Wire could not be wet etched / texturized, found by scientist of University in Leuven (Belgium) Dr. Dekkers.

3 2003 Dr. Könnemann said at Photon Conference in Shenzhen, Prediction that in 10 years (2013) all PV wafers will be sawn with Diamond-Wire This was nearly the case

4 2004 Casting of MONO-LIKE Silicon material by BP USA ALD German furnace maker made for 4 ingots G4/G5/G6 in one furnace published first time Dr. Gerhard Könnemann predicted 2004 This is the future so called CLOVER FURNACE in production 4x G5 = 100 bricks / 4x G6 = 144 bricks And it will be the future

5 MONO PV-wafer Dia-Wire sawn wafer production start in Japan with NTC MB and Asahi MULTI PV-Wafer Diamond-Wire sawn: Only Logomatic successful made Tex by isotrop soft Plasma Dry etch Dr. can be used for texturization of POLY Silicon Wafers sawn by Dia-Wire MONO PV-wafer still cut with slurry but start with Dia-wire sawing Tests were made by Q-Cells Germany successfully and got 0.6 % higher efficiency on Quantum Cells But 2010 POLY PV wafer cut have to continue still with slurry No Diamond-wire!! because WET TEXTURIZATION AS USUAL POSSIBLE WET TEXTURIZATION IS THE ONLY KNOWN POSSIBILITY to etch MULTI-PV Diamond-Wire sawn wafer

6 Comparison of wafer price 2010 MONO Wafer price 60 cts. POLY Wafer price 49 cts REVOLUTION: SITUATION: BREAK THROUGH of MONO PV Wafer 1) No Dia-wire cut on POLY -wafer possible. DIA-WIRE SAWING Cost drop of MONO PV-wafer from 60 cts. They cannot be wet texturized. 2) Wet etch doesn t make a textured surface on POLY /PV wafer when cut with Dia-wire cut by Dia-wire -10 cts. 3) Test start for texturization, by RIE - Black Silicon - metal - sand blast etc. all more expensive than simple wet etch Drop to MONO Wafer price 50 cts. POLY - Slurry price Wafer price remains 49 cts. Wafer 50cts. MONO same price as MULTI 49 cts.

7 Market Reaction: MONO Wafer win market share Huge investment in MONO wafer production NEW brick polish grinder from G&N and PERC and HIT -3cts. Thinner POLY PV-wafer lowers -3 cts. saves 2 % of breakage -1 ct. MONO PV-Wafer price 47 cts. BUT POLY PV-Wafer price remains 45 cts. MONO-Wafer 40% are MONO Wafer MULTI-Wafer 60 % are still POLY PV-Wafer Thinner MONO-PV wafer lowers price by new production technology -3 cts. ONLY SLURRY SAWN Possible MONO PV-Wafer price 44 cts. POLY PV-Wafer price remains MONO same price as MULTI 45 cts.

8 Thinner MONO wafer Thinner POLY Wafer by ONLY by Dia-Wire -1 ct. Slurry wire -1ct. MONO PV-Wafer price 43 cts. POLY PV-Wafer price 44 cts NEW performance HP casted POLY material Thinner wafer -1 ct. POLY wafer -1 ct. Efficiency 19.6 % MONO PERC Efficiency 19.0 % POLY PERC MONO PV-Wafer price 42 cts. POLY PV-Wafer price MONO same price as MULTI 43 cts.

9 Dia-wire sawn 3/2014 Soft dry etched REVOLUTION: Dry Etch Test unit 268,78wp Logomatic promotes Dr. isotrop tex. Plasma soft dry etch cost is the same as wet etch +/-0 cts Watt Lab dry etch unit Production unit for future WATT/p reached on 6N March 2014

10 Thinner MONO PV wafer 180 -> 160 micron -1 ct. Efficiency 20.0 % MONO Wafer price is 41 cts. REVOLUTION NEW Poly PV cost reduction when Dia-Wire-Cut Plus Logomatic Dr. dry etch Higher Efficiency 19.6 % POLY PV-Wafer price NEW -10 cts. 33 cts. (Registrated by Logomatic) NEW Optimized Dia-Wire supply NEW LOGISTIC IDEA: Dia-Wire production next to Dia-wire saw STRATEGY (Registrated by Logomatic) Optimized Dia-Wire supply NEW LOGISTIC IDEA: Dia-Wire production next to Dia-wire saw NO logistic costs MONO PV-Wafer price is -2 cts. 39 cts. No transport, no export / import, -2cts. No logistic cost POLY PV-Wafer price NEW 31 cts. 39 cts. PRICE DIFFERENCE 31 cts.

11 New materials HP POLY from G8 to G10 furnace optimized furnace -4 cts. Cheaper MONO silicon material -4 cts. Poly material NEW in G8 furnace casting also MONO-LIKE -4cts. MONO PV Wafer price is 35 cts. POLY PV-Wafer price NEW 23 cts. New Dia-Wire saw technology New Dia-Wire saw technology from Logomatic -2cts. from Logomatic -2cts. MONO PV Wafer price is 33 cts. POLY PV-Wafer price NEW 21 cts. 33 cts. PRICE DIFFERENCE 21 cts.

12 MONO-Like made Ingots in new G6 or G8 furnace -2 cts. Next step: MONO-Like Wafer from G10 furnace thinner wafer -1 ct. POLY silicon material 6N -0 ct. MONO PV-Wafer Efficiency 22 % POLY PV-Wafer Efficiency 21.2 % MONO PV-Wafer price is 33 cts. POLY PV-Wafer price NEW 18 cts.

13 Maybe n-type or else ct. Maybe half-cell -0,0cts. MONO PV-Wafer price is 32.5 cts. POLY PV-Wafer price NEW With Dr. Dry Etch Efficiency 21,8 %!! 18 cts. Kerfless Wafer Efficiency 22.0 % cts. POLY 5N ( %) Kerfless Wafer With dry etch Efficiency 21.6 %++ -2 cts. -3cts. MONO PV-Wafer 180µ 29.5 cts. Thin wafer 160µ 27.5 cts. Thinner wafer 140µ 25.5 cts. MONO IS DEAD! no more space for cost reduction POLY PV-Wafer180µ NEW 13 cts. Thin wafer 160µ 11 cts. Thinner wafer 140µ 9 cts. MONO-Like or HP-Multi have space to reduce wafer cost to under 10 cts. / Wafer

14 MONO-Like The future MONO-Like (ML) Wafer with wet etch 91% convertible to 21.8% efficiency. 9% of MONO-Like have Polystructure and can also be converted to MONO by isotrop dry etch with an efficiency of 21.9% MONO-Like cell production without wafer cost = 30 cts. / wafer cell 5 Wattpeak Wafer thickness 180µ 13cts. + 30cts. = 43 cts. : 5W = 8.6 cts. Wp Wafer thickness 160µ 11 cts cts. = 41 cts. : 5W = 8.2 cts. Wp Wafer Thickness 140µ 9 cts cts. = 39 cts. : 5W = 7.8 cts. Wp Dry Etched Dr. MONO = Diesel is dead with nearly 22% efficiency Philosophic Technical Statement MULTI = Petrol will live and L O W E R MONO-Like = E-Cars are the Future

15 HOW TO CONTINUE WITH MONO-LIKE Optimized cropping to get max wafers Electricy grid-cost / KWh Nuclear: cts. Gas: cts. Carbon: cts. Water: cts. Today Solar is 8 Cts. In 2020 it will reach 4 Cts. The grid will be at cts. Result: Solar can reach the GRID price of less than 2 cts. soon!

16 Come see us for more detailed information. Hall E3 Booth 801/802 Now, we look for INVESTORS on soft dry etch TEX You can texturize even 2 nd class dia-wire cut MONO-Like wafers with Dry Etch Dr. and get efficiency like with pure MONO. For 1 GW only 1 dry etcher beside the other wet etchers is needed to reach 22% efficiency and more PERC (Quantum). The PV market needs: 100 units Dr. / year for 1.4 Mio $ per unit GREAT THANKS FOR YOUR ATTENTION!