B Bibliography. TOC Index. Quit file

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2 [1] R. S. Muller and T. I. Kamins, Device electronics for integrated circuits. Wiley, New York, 2nd ed., [2] S.M. Sze, Physics of Semiconductor Devices. Wiley, New York, 2 ed., [3] P. A. H. Hart, Bipolar and bipolar-mos integration. Elsevier, Amsterdam, [4] H. C. de Graaff and F.M. Klaassen, Compact transistor modelling for circuit design. Springer-Verlag, Wien, [5] J. Lindmayer and C. Y. Wrigley, Fundamentals of semiconductor devices. Van Nostrand, Princeton, [6] I. E. Getreu, Modeling the bipolar transistor. Elsevier Sc. Publ. Comp., Amsterdam, [7] A. van der Ziel, Noise. Sources, characterization, measurement. Prentice- Hall, Englewood Cliffs, [8] J. Berkner, Kompaktmodelle f ur Bipolartransistoren. Praxis der Modellierung, Messung und Parameterbestimmung SGP, VBIC, HICUM und MEXTRAM (Compact models for bipolar transistors. Practice of modelling, measurement and parameter extraction SGP, VBIC, HICUM und MEXTRAM). Expert Verlag, Renningen, (In German). [9] M. Reisch, High-Frequency Bipolar Transistors. Springer, Berlin, [10] G. A. M. Hurkx, H. C. de Graaff, W. J. Kloosterman, and M. P. G. Knuvers, A new analytical diode model including tunneling and avalanche breakdown, IEEE Trans. Elec. Dev., vol. 39, pp , [11] J. J. Ebers and J. L. Moll, Large signal behaviour of junction transistors, Proc. IRE, vol. 42, p. 1761, [12] H. K. Gummel and H. C. Poon, An integral charge control model of bipolar transistors, Bell Sys. Techn. J., vol. May-June, pp , [13] J. L. Moll and I. M. Ross, The dependence of transistor parameters on the distribution of base layer resistivity, Proc. IRE, vol. 44, pp , Jan [14] H. K. Gummel, A charge control relation for bipolar transistors, Bell Sys. Techn. J., vol. January, pp , [15] F. G. O Hara, J. J. H. van den Biesen, H. C. de Graaff, and J. B. Foley, A new physical compact model for lateral PNP transistors, in Proc. of the Bipolar Circuits and Technology Meeting, pp ,

3 [16] F. G. O Hara, J. J. H. van den Biesen, H. C. de Graaff, W. J. Kloosterman, and J. B. Foley, MODELLA A new physics-based compact model for lateral p-n-p transistors, IEEE Trans. Elec. Dev., vol. 39, pp , [17] A. van der Ziel and D. Agouridis, The cutoff frequency falloff in uhf transistors at high currents, Proc. IEEE, vol. 54, pp , [18] C. T. Kirk, A theory of transistor cutoff frequency ( ft ) falloff at high current densities, IRE trans. electr. dev., vol. ED-9, pp , [19] G. M. Kull, L. W. Nagel, S. Lee, P. Lloyd, E. J. Prendergast, and H. Dirks, A unified circuit model for bipolar transistors including quasi-saturation effects, IEEE Trans. Elec. Dev., vol. ED-32, no. 6, pp , [20] R. Beaufoy and J. J. Sparkes, The junction transistor as a charge-controlled device, ATE Journal, vol. 13, pp , [21] H. Kroemer, Two integral relations pertaining to the electron transport through a bipolar transistor with a non-uniform energy gap in the base region, Solid-State Elec., vol. 28, pp , [22] J. R. A. Beale and J. A. G. Slatter, Equivalent circuit of a transistor with a lightly doped collector operating in saturation, Solid-State Elec., vol. 11, pp , [23] M. Schr oter and T.-Y. Lee, Physics-based minority charge and transit time modeling for bipolar transistors, IEEE Trans. Elec. Dev., vol. ED-46, pp , [24] J. R. Hauser, The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometries, IEEE Trans. Elec. Dev., vol. May, pp , [25] H. Groendijk, Modeling base crowding in a bipolar transistor, IEEE Trans. Elec. Dev., vol. ED-20, pp , [26] J. A. Pals, On the noise of a transistor with d.c. current crowding, Philips. Res. Repts, vol. 26, pp , [27] J. C. J. Paasschens, Compact modeling of the noise of a bipolar transistor under DC and AC current crowding conditions, IEEE Trans. Elec. Dev., vol. 51, pp , [28] A. G. Chynoweth, Ionization rates for electrons and holes in silicon, Physical Review, vol. 109, pp ,

4 [29] H. C. de Graaff and W. J. Kloosterman, New formulation of the current and charge relations in bipolar transistor modeling for CACD purposes, IEEE Trans. Elec. Dev., vol. ED-32, p. 2415, [30] H. C. de Graaff, W. J. Kloosterman, J. A. M. Geelen, and M. C. A. M. Koolen, Experience with the new compact Mextram model for bipolar transistors, in Proc. of the Bipolar Circuits and Technology Meeting, pp , [31] M. P. J. G. Versleijen, Distributed high frequency effects in bipolar transistors, in Proc. of the Bipolar Circuits and Technology Meeting, pp , [32] H. C. de Graaff and W. J. Kloosterman, Modeling of the collector epilayer of a bipolar transistor in the Mextram model, IEEE Trans. Elec. Dev., vol. ED-42, pp , Feb [33] L. C. N. de Vreede, H. C. de Graaff, K. Mouthaan, M. de Kok, J. L. Tauritz, and R. G. F. Baets, Advanced modeling of distortion effects in bipolar transistors using the Mextram model, IEEE J. of Solid-State Circuits, vol. 31, pp , Jan [34] L. C. N. de Vreede, H. C. de Graaff, J. L. Tauritz, and R. G. F. Baets, Extension of the collector charge description for compact bipolar epilayermodels, IEEE Trans. Elec. Dev., vol. ED-42, pp , [35] J. C. J. Paasschens, W. J. Kloosterman, R. J. Havens, and H. C. de Graaff, Improved modeling of ouput conductance and cut-off frequency of bipolar transistors, in Proc. of the Bipolar Circuits and Technology Meeting, pp , [36] J. C. J. Paasschens, W. J. Kloosterman, R. J. Havens, and H. C. de Graaff, Improved compact modeling of ouput conductance and cutoff frequency of bipolar transistors, IEEE J. of Solid-State Circuits, vol. 36, pp , [37] J. C. J. Paasschens, W. J. Kloosterman, and R. J. Havens, Modelling two SiGe HBT specific features for circuit simulation, in Proc. of the Bipolar Circuits and Technology Meeting, pp , [38] W. J. Kloosterman and H. C. de Graaff, Avalanche multiplication in a compact bipolar transistor model for circuit simulation, IEEE Trans. Elec. Dev., vol. ED-36, pp , [39] W. J. Kloosterman, J. C. J. Paasschens, and R. J. Havens, A comprehensive bipolar avalanche multiplication compact model for circuit simulation, in Proc. of the Bipolar Circuits and Technology Meeting, pp , [40] J. C. J. Paasschens, R. J. Havens, and L. F. Tiemeijer, Modelling the correla- 362

5 tion in the high-frequency noise of (heterojunction) bipolar transistors using chargepartitioning, in Proc. of the Bipolar Circuits and Technology Meeting, pp , [41] J. C. J. Paasschens and R. de Kort, Modelling the excess noise due to avalanche multiplication in (heterojunction) bipolar transistors, in Proc. of the Bipolar Circuits and Technology Meeting, pp , [42] J. C. J. Paasschens, S. Harmsma, and R. van der Toorn, Dependence of thermal resistance on ambient and actual temperature, in Proc. of the Bipolar Circuits and Technology Meeting, pp , [43] F. O Hara, Physically based compact modelling of lateral pnp transistors, Unclassified Report 2001/804, Philips Nat.Lab., Original report is from [44] H. C. de Graaff and W. J. Kloosterman, The Mextram bipolar transistor model, level 503.2, Unclassified Report 006/94, Philips Nat.Lab., June See Ref. [54]. [45] W. J. Kloosterman and J. A. M. Geelen, Parameter extraction methodology for the Mextram bipolar transistor model, Unclassified Report 003/96, Philips Nat.Lab., See Ref. [54]. [46] W. J. Kloosterman, High frequency validation of the Mextram bipolar transistor model at small collector-emitter voltages, Report 6966, Philips Nat.Lab., [47] W. J. Kloosterman, The base resistance in the QUBiC2, OBIC100 and BIMOS3 process, Report 6997, Philips Nat.Lab., [48] W. J. Kloosterman, The geometric scaling of the Mextram parameters in the QUBiC3 process, Report 7021, Philips Nat.Lab., [49] W. J. Kloosterman, Comparison of Mextram and the Vbic95 bipolar transistor model, Unclassified Report 034/96, Philips Nat.Lab., See Ref. [54]. [50] J. C. J. Paasschens and W. J. Kloosterman, Derivation of the model equations of Mextram, level 503, Unclassified Report NL-UR 2002/808, Philips Nat.Lab., See Ref. [54]. [51] J. C. J. Paasschens and W. J. Kloosterman, The Mextram bipolar transistor model, level 504, Unclassified Report NL-UR 2000/811, Philips Nat.Lab., See Ref. [54]. [52] J. C. J. Paasschens, W. J. Kloosterman, and R. J. Havens, Parameter extraction for the bipolar transistor model Mextram, level 504, Unclassified Report NL-UR 2001/801, Philips Nat.Lab., See Ref. [54]. 363

6 [53] J. C. J. Paasschens,W. J. Kloosterman, and R. van der Toorn, Model derivation of Mextram 504. The physics behind the model, Unclassified Report NL-UR 2002/806, Philips Nat.Lab., See Ref. [54]. [54] For the most recent model descriptions, source code, and documentation, see the web-site Models. [55] V. Palankovski, R. Schultheis, and S. Selberherr, Simulation of power heterojunction bipolar transistor on gallium arsenide, IEEE Trans. Elec. Dev., vol 48, pp , Note: the paper uses α = 1.65 for Si, but α = 1.3 gives a better fit; also κ 300 for GaAs is closer to 40 than to the published value of 46 (Palankovski, personal communication). [56] Pstar User Manual. 364

7 for Modelbooks Books [1, 2, 3, 4, 5, 6, 7, 8, 9] Diode [10] Basic articles [11, 12, 13, 14] LPNP [15, 16] Epilayer model [17, 18, 19] Charge modelling [20, 21, 22, 23] Current crowding [24, 25, 26, 27] Avalanche [28] Mextram articles [29, 30, 31, 32] [33, 34] [35, 36, 37] [38, 39] [40, 41, 42] LPNP reports [43] Mextram reports [44, 45, 46, 47] [48, 49, 50] [51, 52, 53] 365

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